Hetero-epitaxial growth of ZnO films on silicon by low-pressure metal organic chemical vapor deposition

Author

Wang, Qi-Yung ; Shen, Wen-Jun ; Wang, Jun ; Wang, Jian-Hun ; Yi-Ping Zeng ; Li, Jing-Min

Author_Institution

Inst. of Semicond., Acad. Sinica, Beijing, China

Volume

3

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

2370

Abstract

Quality ZnO films were successfully grown on Si(100) substrate by a low-pressure metal organic chemical vapor deposition method in the temperature range of 300-500°C using DEZn and N₂O as precursor and oxygen source respectively. The crystal structure, optical properties and surface morphology of the ZnO films were characterized by X-ray diffraction, optical reflection and atomic force microscopy technologies. It was demonstrated that the crystalline structure and surface morphology of ZnO films strongly depend on the growth temperature.

Keywords

II-VI semiconductors; MOCVD; X-ray diffraction; atomic force microscopy; crystal structure; light reflection; optical properties; semiconductor epitaxial layers; semiconductor growth; silicon; substrates; surface morphology; temperature; vapour phase epitaxial growth; wide band gap semiconductors; zinc compounds; MOCVD; N₂O; Si; X-ray diffraction; ZnO; atomic force microscopy; crystal structure; diethyl zinc precursor; growth temperature; hetero-epitaxial growth; low-pressure metal organic chemical vapor deposition; optical properties; optical reflection; oxygen source; silicon substrate; surface morphology; zinc oxide films; Atom optics; Atomic force microscopy; Chemical vapor deposition; Crystallization; Optical films; Organic chemicals; Semiconductor films; Silicon; Surface morphology; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1435323

Filename

1435323