DocumentCode
3270516
Title
Analysis of subthreshold leakage reduction in CMOS digital circuits
Author
Deepaksubramanyan, Boray S. ; Nuñez, Adrian
Author_Institution
Syracuse Univ. Syracuse, Syracuse
fYear
2007
fDate
5-8 Aug. 2007
Firstpage
1400
Lastpage
1404
Abstract
Leakage power dissipation is projected to grow exponentially in the next decade according to the International Technology Roadmap for Semiconductors (ITRS). This directly affects portable battery operated devices such as cellular phones and PDAs since they have long idle times. Several techniques have been proposed that efficiently minimize this leakage power loss. A comprehensive survey and analysis of various subthreshold leakage power reduction techniques that are applicable to current battery operated devices is presented in this work with an emphasis on static CMOS circuits. Results show a clear tradeoff between leakage power and other circuit performance parameters. Based on this analysis, a designer or an automation tool would be able to select the appropriate leakage control technique for a particular application.
Keywords
CMOS integrated circuits; integrated circuit design; CMOS digital circuits; PDA; cellular phones; leakage power dissipation; leakage power loss; portable battery operated devices; static CMOS circuits; subthreshold leakage reduction; Batteries; CMOS digital integrated circuits; CMOS technology; Cellular phones; Circuit optimization; Design automation; Digital circuits; Personal digital assistants; Power dissipation; Subthreshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2007. MWSCAS 2007. 50th Midwest Symposium on
Conference_Location
Montreal, Que.
ISSN
1548-3746
Print_ISBN
978-1-4244-1175-7
Electronic_ISBN
1548-3746
Type
conf
DOI
10.1109/MWSCAS.2007.4488809
Filename
4488809
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