• DocumentCode
    3270516
  • Title

    Analysis of subthreshold leakage reduction in CMOS digital circuits

  • Author

    Deepaksubramanyan, Boray S. ; Nuñez, Adrian

  • Author_Institution
    Syracuse Univ. Syracuse, Syracuse
  • fYear
    2007
  • fDate
    5-8 Aug. 2007
  • Firstpage
    1400
  • Lastpage
    1404
  • Abstract
    Leakage power dissipation is projected to grow exponentially in the next decade according to the International Technology Roadmap for Semiconductors (ITRS). This directly affects portable battery operated devices such as cellular phones and PDAs since they have long idle times. Several techniques have been proposed that efficiently minimize this leakage power loss. A comprehensive survey and analysis of various subthreshold leakage power reduction techniques that are applicable to current battery operated devices is presented in this work with an emphasis on static CMOS circuits. Results show a clear tradeoff between leakage power and other circuit performance parameters. Based on this analysis, a designer or an automation tool would be able to select the appropriate leakage control technique for a particular application.
  • Keywords
    CMOS integrated circuits; integrated circuit design; CMOS digital circuits; PDA; cellular phones; leakage power dissipation; leakage power loss; portable battery operated devices; static CMOS circuits; subthreshold leakage reduction; Batteries; CMOS digital integrated circuits; CMOS technology; Cellular phones; Circuit optimization; Design automation; Digital circuits; Personal digital assistants; Power dissipation; Subthreshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2007. MWSCAS 2007. 50th Midwest Symposium on
  • Conference_Location
    Montreal, Que.
  • ISSN
    1548-3746
  • Print_ISBN
    978-1-4244-1175-7
  • Electronic_ISBN
    1548-3746
  • Type

    conf

  • DOI
    10.1109/MWSCAS.2007.4488809
  • Filename
    4488809