Title :
Electron beam lithography using inorganic resist at low acceleration voltage
Author :
Ishii, Yoshiaki ; Taniguchi, Jun ; Ishikawa, Kiyoshi ; Sakamoto, Yoshinori ; Sato, Isao ; Miyamoto, Iwao
Author_Institution :
Dept. of Appl. Electron., Tokyo Univ. of Sci., Chiba, Japan
Abstract :
In this paper, EBL at low acceleration voltage is possible to control of developed depth (3D patterning) and rapid fabrication process around 100 nm line widths. Furthermore, inorganic resist is effective for fine patterning, and this material is eco-friendly. The combination of these techniques realizes time-saving, low electrical consumption and eco-friendly process and powerful tool for mask patterning and 3D nanoimprint mold fabrication.
Keywords :
electron beam lithography; masks; nanolithography; nanopatterning; resists; soft lithography; 3D nanoimprint mold fabrication; 3D patterning; eco-friendly process; electron beam lithography; fine patterning; inorganic resist; low acceleration voltage; low electrical consumption; mask patterning; Acceleration; Electron beams; Fabrication; Inorganic materials; Lithography; Low voltage; Nanolithography; Organic materials; Resists; Voltage control; Electron beam lithoguraphy; inorganic resist; low acceleration voltage; nanoimprint;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2005 International
Print_ISBN :
4-9902472-2-1
DOI :
10.1109/IMNC.2005.203762
