Electron beam lithography using inorganic resist at low acceleration voltage

Author

Ishii, Yoshiaki ; Taniguchi, Jun ; Ishikawa, Kiyoshi ; Sakamoto, Yoshinori ; Sato, Isao ; Miyamoto, Iwao

Author_Institution

Dept. of Appl. Electron., Tokyo Univ. of Sci., Chiba, Japan

fYear

2005

fDate

25-28 Oct. 2005

Firstpage

110

Lastpage

111

Abstract

In this paper, EBL at low acceleration voltage is possible to control of developed depth (3D patterning) and rapid fabrication process around 100 nm line widths. Furthermore, inorganic resist is effective for fine patterning, and this material is eco-friendly. The combination of these techniques realizes time-saving, low electrical consumption and eco-friendly process and powerful tool for mask patterning and 3D nanoimprint mold fabrication.

Keywords

electron beam lithography; masks; nanolithography; nanopatterning; resists; soft lithography; 3D nanoimprint mold fabrication; 3D patterning; eco-friendly process; electron beam lithography; fine patterning; inorganic resist; low acceleration voltage; low electrical consumption; mask patterning; Acceleration; Electron beams; Fabrication; Inorganic materials; Lithography; Low voltage; Nanolithography; Organic materials; Resists; Voltage control; Electron beam lithoguraphy; inorganic resist; low acceleration voltage; nanoimprint;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2005 International

Print_ISBN

4-9902472-2-1

Type

conf

DOI

10.1109/IMNC.2005.203762

Filename

1595238

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3270566