Title :
C-band power amplifier MIC
Author :
Busurin, Alex ; Abolduyev, Igor M.
Author_Institution :
RI Pulsar, Moscow, Russia
Abstract :
A 5.9 to 6.45 GHz MIC amplifier module has been developed for use in satellite transponders. The amplifier module demonstrated an output power from 120 to 3000 mW. The key elements of all the C-band MIC are domestic GaAs FETs
Keywords :
III-V semiconductors; field effect MMIC; gallium arsenide; microwave power amplifiers; modules; satellite communication; transponders; 120 to 3000 mW; 5.9 to 6.45 GHz; C-band power amplifier MIC; FET; GaAs; III-V semiconductors; MIC amplifier module; SHF; output power; satellite transponders; Couplers; FETs; Gain; Gallium arsenide; Microwave integrated circuits; Power amplifiers; Power generation; Satellites; Scattering parameters; Transponders;
Conference_Titel :
Satellite Communications, 1994. ICSC'94., Proceedings of International Conference on
Conference_Location :
Moscow
Print_ISBN :
0-7803-2514-1
DOI :
10.1109/ICSC.1994.523132
