DocumentCode
3270614
Title
Organic monolayers covalently bonded to Si as ultra thin photoresist films in vacuum ultra-violet lithography
Author
Sugimura, H. ; Sano, Hikaru ; Lee, Kyung-Hwang ; Murase, Kuniaki
Author_Institution
Dept. of Mater. Sci. & Eng., Kyoto Univ., Japan
fYear
2005
fDate
25-28 Oct. 2005
Firstpage
116
Lastpage
117
Abstract
In this paper, we report on the application of our VUV patterning method to a SAM covalently attached to Si substrates as an alchoxy (Si-O-R) form. Although, we have, so far, focused mainly on the VUV-patterning of organosilane SAMs prepared on oxide-covered Si substrates, the organosilane SAMs are not satisfactory durable as a masking material in some types of chemical etching processes. For example, the underlying oxide layer is readily damaged with hydrofluoric (HF) acid and the SAMs are exfoliated in a short time. SAMs covalently bonded to Si through Si-C or Si-O-C bonds are promising as alternatives.
Keywords
monolayers; nanopatterning; organic compounds; photoresists; self-assembly; silicon; thin films; ultraviolet lithography; Si-C; Si-O-C; Si-O-R form; VUV patterning method; VUV-patterning; alchoxy form; hydrofluoric acid; organic monolayers; organosilane SAM; oxide layer; self-assembled monolayer; ultra thin photoresist films; vacuum ultraviolet lithography; Bonding; Etching; Hafnium; Lithography; Optical surface waves; Resists; Semiconductor films; Substrates; Surface topography; Surface treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2005 International
Print_ISBN
4-9902472-2-1
Type
conf
DOI
10.1109/IMNC.2005.203765
Filename
1595241
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