DocumentCode
3270634
Title
The SARAM (sequential access and random access memory), a new kind of dual-port memory for communications now and beyond
Author
Smith, Jeffrey C.
Author_Institution
Specialty Memory Products & Static RAM Div., Integrated Device Technol. Inc., Salinas, CA, USA
fYear
1993
fDate
28-30 Sep 1993
Firstpage
571
Lastpage
579
Abstract
As networks have increased in popularity over the past few years, dual-port RAMs have also increased in popularity. This is attributed to the design simplification using the dual-port RAMs. Currently there are many applications requiring the use of dual-port RAMs. One such is the transfer of data between peripherals and controllers in real time to solve high throughput problems. The current design methods use standard static random access memory devices (SRAMs) and first-in-first-out memory devices (FIFOs). In many cases, dual-port RAM devices are the best design solutions to obtain the required throughput bandwidth. A new dual-port RAM, called the SARAM, offers the best of both synchronous and asynchronous interfaces within a single component. In addition, a single SARAM can handle ALL the ATM bus rates up to the current 2.4 Gbps maximum
Keywords
integrated circuit design; integrated memory circuits; random-access storage; sequential circuits; two-port networks; 2.4 Gbit/s; ATM bus rates; SARAM; design methods; dual-port memory; sequential access and random access memory; throughput bandwidth; throughput problems; Asynchronous transfer mode; Bandwidth; Bridges; Communication system control; Control systems; Logic; Random access memory; Read-write memory; Telecommunication control; Throughput;
fLanguage
English
Publisher
ieee
Conference_Titel
WESCON/'93. Conference Record,
Conference_Location
San Francisco, CA
ISSN
1095-791X
Print_ISBN
0-7803-9970-6
Type
conf
DOI
10.1109/WESCON.1993.488597
Filename
488597
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