• DocumentCode
    3270634
  • Title

    The SARAM (sequential access and random access memory), a new kind of dual-port memory for communications now and beyond

  • Author

    Smith, Jeffrey C.

  • Author_Institution
    Specialty Memory Products & Static RAM Div., Integrated Device Technol. Inc., Salinas, CA, USA
  • fYear
    1993
  • fDate
    28-30 Sep 1993
  • Firstpage
    571
  • Lastpage
    579
  • Abstract
    As networks have increased in popularity over the past few years, dual-port RAMs have also increased in popularity. This is attributed to the design simplification using the dual-port RAMs. Currently there are many applications requiring the use of dual-port RAMs. One such is the transfer of data between peripherals and controllers in real time to solve high throughput problems. The current design methods use standard static random access memory devices (SRAMs) and first-in-first-out memory devices (FIFOs). In many cases, dual-port RAM devices are the best design solutions to obtain the required throughput bandwidth. A new dual-port RAM, called the SARAM, offers the best of both synchronous and asynchronous interfaces within a single component. In addition, a single SARAM can handle ALL the ATM bus rates up to the current 2.4 Gbps maximum
  • Keywords
    integrated circuit design; integrated memory circuits; random-access storage; sequential circuits; two-port networks; 2.4 Gbit/s; ATM bus rates; SARAM; design methods; dual-port memory; sequential access and random access memory; throughput bandwidth; throughput problems; Asynchronous transfer mode; Bandwidth; Bridges; Communication system control; Control systems; Logic; Random access memory; Read-write memory; Telecommunication control; Throughput;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    WESCON/'93. Conference Record,
  • Conference_Location
    San Francisco, CA
  • ISSN
    1095-791X
  • Print_ISBN
    0-7803-9970-6
  • Type

    conf

  • DOI
    10.1109/WESCON.1993.488597
  • Filename
    488597