Title :
Emission characteristics of silicon field emitter arrays as space charge and wafer charging neutralizer in ion implanter
Author :
Kojima, T. ; Nakamura, K. ; Gotoh, Y. ; Nagao, M. ; Tsuji, H. ; Ishikawa, J. ; Ikejiri, T. ; Sakai, S. ; Umisedo, S. ; Nagai, N.
Author_Institution :
Dept. of Electron. Sci. & Eng., Kyoto Univ., Japan
Abstract :
We have proposed a novel CND: a gated silicon field emission array (Si-FEA) (Ikejiri, 2003). Si-FEA can be an ideal electron source for CND, because the energy distribution expected to be narrow enough to satisfy the above requirements. Furthermore, Si-FEA may eliminate the use of metal. However, the surface of silicon emitter tends to be oxidized when residual gas of a vacuum chamber includes O2 gas. While, carbonized silicon emitter is expected to have oxidation resistance, and it doesn´t include metal. So in this study, electron emission characteristics of Si-FEA and carbonized Si-FEA (Si:C-FEA) were investigated.
Keywords :
electron emission; elemental semiconductors; field emitter arrays; ion implantation; oxidation; silicon; space charge; Si; carbonized silicon emitter; charge neutralization device; electron emission characteristic; energy distribution; ion implanter; oxidation resistance; silicon field emitter array; space charge; vacuum chamber; wafer charging neutralizer; Field emitter arrays; Ion beams; Oxidation; Plasma applications; Plasma devices; Plasma immersion ion implantation; Plasma temperature; Silicon; Space charge; Surface resistance;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2005 International
Print_ISBN :
4-9902472-2-1
DOI :
10.1109/IMNC.2005.203767
