Title :
Monolithic Single-Pole Sixteen-Throw T/R Switch for Next-Generation Front-End Module
Author :
Jie Cui ; Lei Chen ; Yi Liu
Author_Institution :
Shanghai Adv. Res. Inst., Shanghai, China
Abstract :
A broadband monolithic linear single-pole, sixteen-throw (SP16T) antenna switch has been designed and fabricated in 180 nm thin film SOI CMOS process, which is intended for the next generation multimode multiband (MMMB) cellular applications. The switch features the minimum 0.7 dB and average 1dB insertion loss, 0.1 dB compression point of 29 dBm and at least 33 dB isolation at all cellular bands for mobile front ends by applying distributed architecture and adaptive supply voltage generator. To the best of our knowledge, this work is the first demonstration of SP16T antenna switch with superior isolation and power handling capacities for most of the known cellular bands with satisfactory harmonic and intermodulation distortion performance on SOI. The simulated and measured results show excellent agreement.
Keywords :
CMOS integrated circuits; antenna accessories; cellular radio; harmonic distortion; intermodulation distortion; next generation networks; semiconductor switches; silicon-on-insulator; MMMB cellular applications; adaptive monolithic single-pole sixteen-throw T/R switch; adaptive supply voltage generator; broadband SP16T antenna switch; cellular bands; distributed architecture; harmonic distortion performance; insertion loss; intermodulation distortion performance; loss 0.7 dB; loss 1 dB; mobile front-ends; multimode multiband cellular applications; next-generation front-end module; power handling capacities; size 180 nm; thin film SOI CMOS process; Antenna measurements; Antennas; GSM; Harmonic analysis; Insertion loss; Switches; Switching circuits; Multimode multiband (MMMB); silicon-on-insulator (SOI); switches;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2014.2309082