Title :
Device optimization of multiple-channel FET with 2D Poisson-Schrodinger solver
Author :
Kim, Joong-sik ; Won, Taeyoung
Author_Institution :
Dept. of Electr. Eng., Inha Univ., Incheon, South Korea
Abstract :
Recently, a double-gate (DG) structure has attracted a great deal of attention for its potential as a technology driver for sub-40nm MOSFET. In this paper, we report our quantum-mechanical investigation on mulitple-channel FET in an effort to optimize the device structure.
Keywords :
field effect transistors; semiconductor device models; 2D Poisson-Schrodinger solver; device optimization; double gate structure; multiple-channel FET; quantum-mechanical investigation; Electrons; FETs; FinFETs; Lithography; MOSFET circuits; Poisson equations; Quantum mechanics; Schrodinger equation; Transconductance; Voltage;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2005 International
Print_ISBN :
4-9902472-2-1
DOI :
10.1109/IMNC.2005.203771
