Title :
Characterization of argon fast atom beam source and its application to the fabrication of resonant tunneling diodes
Author :
Suhara, Michihiko ; Matsuzaka, Norihiko ; Fukumitsu, Masakazu ; Okumura, Tsugunori
Author_Institution :
Fac. of Urban Liberal Arts, Tokyo Metropolitan Univ., Japan
Abstract :
In this paper, energy distribution spectra of residual ion of the saddle-field argon (Ar) FAR source, and neutralization coefficients were experimentally evaluated for various process parameters by using an analyzer of our own fabricating. Moreover, GaInP/GaAs triple barrier resonant tunneling diodes (TBRTDs) were processed by using the argon FAB etching under appropriate condition and clear NDRs were estimated with high yield.
Keywords :
III-V semiconductors; etching; gallium arsenide; gallium compounds; nanoelectronics; resonant tunnelling diodes; FAB etching; GaInP-GaAs; energy distribution spectra; fast atom beam source; neutralization coefficient; residual ion; resonant tunneling diodes; saddle-field argon; Argon; Atomic beams; Cathodes; Diodes; Etching; Fabrication; Gallium arsenide; Particle beams; Resonant tunneling devices; Yield estimation;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2005 International
Print_ISBN :
4-9902472-2-1
DOI :
10.1109/IMNC.2005.203773
