• DocumentCode
    3270797
  • Title

    Ku-band power amplifier MIC

  • Author

    Bryntseva, T.E. ; Abolduyev, I.M.

  • Author_Institution
    SRI Pulsar, Moscow, Russia
  • Volume
    2
  • fYear
    1994
  • fDate
    18-21 Oct 1994
  • Firstpage
    62
  • Abstract
    The results of the design and fabrication of a Ku-band power amplifier MIC are presented. The frequency range of the MIC is from 14.0 GHz to 14.5 GHz. The key elements of the MIC with an output power of up to 250 mW are GaAs FETs
  • Keywords
    III-V semiconductors; MMIC power amplifiers; gallium arsenide; microwave power amplifiers; 14.0 to 14.5 GHz; 250 mW; FET; GaAs; III-V semiconductor; Ku-band power amplifier MIC; SHF; design; fabrication; frequency range; Couplers; FETs; Gain; Gallium arsenide; Microwave integrated circuits; Power amplifiers; Power generation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Satellite Communications, 1994. ICSC'94., Proceedings of International Conference on
  • Conference_Location
    Moscow
  • Print_ISBN
    0-7803-2514-1
  • Type

    conf

  • DOI
    10.1109/ICSC.1994.523133
  • Filename
    523133
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3270797