Title :
Ku-band power amplifier MIC
Author :
Bryntseva, T.E. ; Abolduyev, I.M.
Author_Institution :
SRI Pulsar, Moscow, Russia
Abstract :
The results of the design and fabrication of a Ku-band power amplifier MIC are presented. The frequency range of the MIC is from 14.0 GHz to 14.5 GHz. The key elements of the MIC with an output power of up to 250 mW are GaAs FETs
Keywords :
III-V semiconductors; MMIC power amplifiers; gallium arsenide; microwave power amplifiers; 14.0 to 14.5 GHz; 250 mW; FET; GaAs; III-V semiconductor; Ku-band power amplifier MIC; SHF; design; fabrication; frequency range; Couplers; FETs; Gain; Gallium arsenide; Microwave integrated circuits; Power amplifiers; Power generation;
Conference_Titel :
Satellite Communications, 1994. ICSC'94., Proceedings of International Conference on
Conference_Location :
Moscow
Print_ISBN :
0-7803-2514-1
DOI :
10.1109/ICSC.1994.523133
