Understanding the Switching Mechanism in Transition Metal Oxide Based ReRAM Devices

Author

Jha, Rashmi ; Long, Branden

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of Toledo, Toledo, OH, USA

fYear

2012

fDate

19-21 Aug. 2012

Firstpage

73

Lastpage

77

Abstract

This paper presents the switching characteristics of ReRAM devices fabricated using Ru as bottom electrode, HfO₂ as the switching Transition Metal Oxide, and TiN as the top electrode. The devices demonstrated excellent endurance up to 10⁶ cycles and retention up to 10⁵ seconds. The Capacitance-Voltage characteristics were studied in conjunction with the Current-Voltage characteristics to understand the role of the compliance current in governing the filament dimensions and mechanism of switching.

Keywords

electrodes; random-access storage; transition metals; ReRAM devices; capacitance-voltage characteristics; current-voltage characteristics; electrode; switching mechanism; transition metal oxide; Capacitance; Capacitance-voltage characteristics; Current measurement; Hafnium compounds; Nonvolatile memory; Switches; Filamentary Switching; Non-Volatile Memory; Resistive Random Access Memory (ReRAM); Transition Metal Oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI (ISVLSI), 2012 IEEE Computer Society Annual Symposium on

Conference_Location

Amherst, MA

ISSN

2159-3469

Print_ISBN

978-1-4673-2234-8

Type

conf

DOI

10.1109/ISVLSI.2012.53

Filename

6296451