Title :
Understanding the Switching Mechanism in Transition Metal Oxide Based ReRAM Devices
Author :
Jha, Rashmi ; Long, Branden
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Toledo, Toledo, OH, USA
Abstract :
This paper presents the switching characteristics of ReRAM devices fabricated using Ru as bottom electrode, HfO2 as the switching Transition Metal Oxide, and TiN as the top electrode. The devices demonstrated excellent endurance up to 106 cycles and retention up to 105 seconds. The Capacitance-Voltage characteristics were studied in conjunction with the Current-Voltage characteristics to understand the role of the compliance current in governing the filament dimensions and mechanism of switching.
Keywords :
electrodes; random-access storage; transition metals; ReRAM devices; capacitance-voltage characteristics; current-voltage characteristics; electrode; switching mechanism; transition metal oxide; Capacitance; Capacitance-voltage characteristics; Current measurement; Hafnium compounds; Nonvolatile memory; Switches; Filamentary Switching; Non-Volatile Memory; Resistive Random Access Memory (ReRAM); Transition Metal Oxide;
Conference_Titel :
VLSI (ISVLSI), 2012 IEEE Computer Society Annual Symposium on
Conference_Location :
Amherst, MA
Print_ISBN :
978-1-4673-2234-8
DOI :
10.1109/ISVLSI.2012.53
