Title :
Process dependent output characteristics of resonant cavity type avalanche photodetector
Author :
Kim, Dong Ho ; Roh, Cheong Hyun ; Song, Hong Joo ; Choi, Yeon-Shik ; Hahn, Cheol-Koo ; Kim, Hoon ; Koh, Jung Hyuk ; Kim, Tae Geun
Author_Institution :
Dept of Electron. Mater. Eng., Kwangwoon Univ., Seoul, South Korea
Abstract :
In this work, we proposed resonant cavity (RC) type avalanche photodetector (APD) as one technical breakthrough in their wavelength performance and integration with surface light emitting devices for further applications. InAs self-assembled quantum dots (SAQDs) were used as absorbing layer for the 1 μm light absorption and AlAs/GaAs quarter-wavelength DBRs were used to construct resonant cavity. Optimized epitaxial layer and device structures were calculated by impact ionization model and also the device fabrication processes were calibrated.
Keywords :
III-V semiconductors; aluminium compounds; cavity resonators; gallium arsenide; impact ionisation; indium compounds; light absorption; light emitting devices; photodetectors; self-assembly; semiconductor quantum dots; AlAs-GaAs; InAs; device fabrication; epitaxial layer; impact ionization; light absorption; process dependent output characteristics; quarter-wavelength DBR; resonant cavity type avalanche photodetector; self-assembled quantum dots; surface light emitting device; Absorption; Epitaxial layers; Fabrication; Gallium arsenide; Impact ionization; Photodetectors; Quantum dots; Resonance; Semiconductor process modeling; Surface waves;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2005 International
Print_ISBN :
4-9902472-2-1
DOI :
10.1109/IMNC.2005.203776
