DocumentCode
3270856
Title
Fabrication of three-dimensional HSQ resist structure using electron beam lithography
Author
Matsubara, Yasushi ; Taniguchi, Jun ; Miyamoto, Iwao
Author_Institution
Dept. of Appl. Electron., Tokyo Univ. of Sci., Chiba, Japan
fYear
2005
fDate
25-28 Oct. 2005
Firstpage
140
Lastpage
141
Abstract
Electron beam lithography (EBL) is very important for semiconductor manufacturing process, especially for making photo-masks and ASIC devices. EBL is also important for fabricating MEMS, MOES and so on. In this paper, we used hydrogen silsesquioxane (HSQ), which acts as a negative resist (Namatsu, 1998). And we fabricated three-dimensional HSQ resist structure by changing the EB acceleration voltage.
Keywords
electron beam lithography; resists; 3D HSQ resist structure; EB acceleration voltage; electron beam lithography; hydrogen silsesquioxane; negative resist; Acceleration; Application specific integrated circuits; Electron beams; Fabrication; Hydrogen; Lithography; Manufacturing processes; Micromechanical devices; Resists; Voltage; HSQ; electron beam lithography; three-dimensional structure;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2005 International
Print_ISBN
4-9902472-2-1
Type
conf
DOI
10.1109/IMNC.2005.203777
Filename
1595253
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