DocumentCode :
3270890
Title :
Improved method for MOSFET voltage rise-time and fall-time estimation in inverter switching loss calculation
Author :
Jing Guo ; Hao Ge ; Ye Jin ; Emadi, Ali
Author_Institution :
Electr. & Comput. Eng. Dept., McMaster Univ., Hamilton, ON, Canada
fYear :
2015
fDate :
14-17 June 2015
Firstpage :
1
Lastpage :
6
Abstract :
Power losses calculation is important in inverter design since it provides a reference for the inverter thermal management. For MOSFET based inverters, many of MOSFET datasheets do not provide switching power losses directly. In order to estimate MOSFET switching power losses, MOSFET switching time has to be estimated firstly. The purpose of this paper is to develop an improved method for MOSFET voltage rise-time and fall-time estimation in switching power loss calculation. To obtain accurate MOSFET switching power losses, rise-time and fall-time of voltage should be estimated as accurately as possible. Two methods are introduced here, an existing method and a proposed method. A certain MOSFET product has been used for the implementation and comparison of these two methods. In the end, the calculated results are verified by experiments. Double pulse test is utilized for the experimental verification. It is proved that the estimation accuracy is improved by the proposed method.
Keywords :
MOSFET; invertors; switching convertors; MOSFET based inverters; MOSFET fall-time estimation; MOSFET switching power losses; MOSFET switching time; MOSFET voltage rise-time; double pulse test; fall-time estimation; inverter switching loss calculation; inverter thermal management; Estimation; Logic gates; MOSFET; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Transportation Electrification Conference and Expo (ITEC), 2015 IEEE
Conference_Location :
Dearborn, MI
Type :
conf
DOI :
10.1109/ITEC.2015.7165790
Filename :
7165790
Link To Document :
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