DocumentCode
3270890
Title
Improved method for MOSFET voltage rise-time and fall-time estimation in inverter switching loss calculation
Author
Jing Guo ; Hao Ge ; Ye Jin ; Emadi, Ali
Author_Institution
Electr. & Comput. Eng. Dept., McMaster Univ., Hamilton, ON, Canada
fYear
2015
fDate
14-17 June 2015
Firstpage
1
Lastpage
6
Abstract
Power losses calculation is important in inverter design since it provides a reference for the inverter thermal management. For MOSFET based inverters, many of MOSFET datasheets do not provide switching power losses directly. In order to estimate MOSFET switching power losses, MOSFET switching time has to be estimated firstly. The purpose of this paper is to develop an improved method for MOSFET voltage rise-time and fall-time estimation in switching power loss calculation. To obtain accurate MOSFET switching power losses, rise-time and fall-time of voltage should be estimated as accurately as possible. Two methods are introduced here, an existing method and a proposed method. A certain MOSFET product has been used for the implementation and comparison of these two methods. In the end, the calculated results are verified by experiments. Double pulse test is utilized for the experimental verification. It is proved that the estimation accuracy is improved by the proposed method.
Keywords
MOSFET; invertors; switching convertors; MOSFET based inverters; MOSFET fall-time estimation; MOSFET switching power losses; MOSFET switching time; MOSFET voltage rise-time; double pulse test; fall-time estimation; inverter switching loss calculation; inverter thermal management; Estimation; Logic gates; MOSFET; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Transportation Electrification Conference and Expo (ITEC), 2015 IEEE
Conference_Location
Dearborn, MI
Type
conf
DOI
10.1109/ITEC.2015.7165790
Filename
7165790
Link To Document