Title :
Comparison of trimming techniques for sub-lithographic silicon structures
Author :
Dreeskornfeld, L. ; Graham, A.P. ; Hartwich, J. ; Landgraf, E. ; Lutz, T. ; Rösner, W. ; Specht, M. ; Risch, L.
Author_Institution :
Infineon Technol., Corporate Res., Munich, Germany
Abstract :
In this paper the limits of trimming techniques are explored. Very thin layers of organic resist material are investigated. Further, extremely small feature sizes down to 8 nm are achieved. Different trimming procedures utilizing resist trimming, HF dip of TEOS hard-mask and sacrificial oxidation are compared.
Keywords :
elemental semiconductors; nanolithography; oxidation; resists; silicon; HF dip; TEOS; feature sizes; hard-mask; organic resist material; sacrificial oxidation; sub-lithographic silicon structures; trimming technique; Etching; FinFETs; Hafnium; Inductors; Lithography; Oxidation; Plasma applications; Plasma density; Resists; Silicon;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2005 International
Print_ISBN :
4-9902472-2-1
DOI :
10.1109/IMNC.2005.203783
