Title :
Single-electron-memory integrated circuit for giga-to-tera bit storage
Author :
Yano, K. ; Ishii, T. ; Sano, T. ; Mine, T. ; Murai, F. ; Seki, K.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
Abstract :
A single-electron-based integrated circuit is presented. An 8/spl times/8 b memory-cell array demonstrates read/write, ushering in a new phase of research on single-electron devices.
Keywords :
integrated memory circuits; memory-cell array; single-electron-memory integrated circuit; Electron traps; Flash memory; Nanoscale devices; Phased arrays; Silicon; Single electron devices; Single electron memory; Temperature; Ultra large scale integration; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 1996. Digest of Technical Papers. 42nd ISSCC., 1996 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3136-2
DOI :
10.1109/ISSCC.1996.488617
