DocumentCode
3270999
Title
A true nonvolatile analog memory cell using coupling-charge balancing
Author
Kyu-Hyoun Kim ; Kwyro Lee
Author_Institution
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Taejeon, South Korea
fYear
1996
fDate
10-10 Feb. 1996
Firstpage
268
Lastpage
269
Abstract
A true nonvolatile analog memory cell with a coupling-charge balancing scheme (CCBS) is proposed as a fast precise analog data storage element that achieves the fastest theoretical programming speed among the various FN-tunneling-based analog memories with simple programming circuitry.
Keywords
analogue integrated circuits; analogue storage; integrated memory circuits; tunnelling; Fowler-Nordheim tunneling; coupling-charge balancing; data storage element; nonvolatile analog memory cell; programming circuitry; Analog memory; Charge measurement; Coupling circuits; Current measurement; EPROM; Nonvolatile memory; Pulse measurements; Threshold voltage; Tunneling; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 1996. Digest of Technical Papers. 42nd ISSCC., 1996 IEEE International
Conference_Location
San Francisco, CA, USA
ISSN
0193-6530
Print_ISBN
0-7803-3136-2
Type
conf
DOI
10.1109/ISSCC.1996.488618
Filename
488618
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