Title :
A 2.5 V 256-level non-volatile analog storage device using EEPROM technology
Author :
Van Tran, H. ; Blyth, T. ; Sowards, D. ; Engh, L. ; Nataraj, B.S. ; Dunne, T. ; Hai Wang ; Vishal Sarin ; Tin Lam ; Nazarian, H. ; Genda Hu
Author_Institution :
Information Storage Devices Inc., San Jose, CA, USA
Abstract :
This integrated circuit stores 256 analog voltage levels in high density, non-volatile memory with /spl sim/7.5m V resolution per level. By contrast, the multilevel storage capacity of a typical digital non-volatile memory is 4-level per cell. The integrated circuit operates over a voltage range of 2.5 V to 5.5 V. Previous analog storage implementation use a 5.0 V supply for /spl sim/12 mV equivalent resolution per level in a 128 k EEPROM.
Keywords :
CMOS analogue integrated circuits; CMOS memory circuits; EPROM; analogue storage; 2.5 to 5 V; CMOS integrated circuit; EEPROM technology; high density memory; multilevel nonvolatile analog storage device; Driver circuits; EPROM; Filters; Integrated circuit technology; Logic arrays; Nonvolatile memory; Power amplifiers; Sampling methods; Voltage; Writing;
Conference_Titel :
Solid-State Circuits Conference, 1996. Digest of Technical Papers. 42nd ISSCC., 1996 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3136-2
DOI :
10.1109/ISSCC.1996.488619
