DocumentCode :
3271032
Title :
A Wide Band Locking Range Quarter-PhaseGenerator PLL Using 0.13um BiCMOS Technology
Author :
Liu, Xuelian ; McDonald, John F.
Author_Institution :
Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA
fYear :
2012
fDate :
19-21 Aug. 2012
Firstpage :
131
Lastpage :
134
Abstract :
This paper presents a quarter-phase 32GHz PLL using 0.13um SiGe BiCMOS technology for a high speed microprocessor. The PLL characterizes a 3-state phase frequency detector (PFD), a charge pump loop filter, a VCO, a frequency doubler and a feedback 1/32 frequency divider. The VCO used in this PLL is a four -- stage ring oscillator that has a wide tuning range with a feed-forward interpolation topology for coarse frequency tuning and varactor diodes load capacitance variation for fine frequency tuning. The PLL has a wide locking range from 24.4 GHz to 39 GHz with a phase noise of-102dBc/Hz at 1MHz offset.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; capacitance; charge pump circuits; diodes; feedforward; filters; frequency dividers; frequency multipliers; high-speed integrated circuits; interpolation; microwave integrated circuits; microwave oscillators; phase locked loops; tuning; varactors; voltage-controlled oscillators; 3-state phase frequency detector; BiCMOS technology; PFD; SiGe; VCO; charge pump loop filter; coarse frequency tuning; feedback frequency divider; feedforward interpolation topology; four-stage ring oscillator; frequency 1 MHz; frequency 24.4 GHz to 39 GHz; frequency 32 GHz; frequency doubler; high speed microprocessor; phase noise; quarter-phase PLL; size 0.13 mum; tuning range; varactor diodes load capacitance variation; wide band locking range quarter-phasegenerator PLL; Charge pumps; Clocks; Phase frequency detector; Phase locked loops; Silicon germanium; Tuning; Voltage-controlled oscillators; Charge Pumpe; PLL; SiGe BiCMOS; VCO;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI (ISVLSI), 2012 IEEE Computer Society Annual Symposium on
Conference_Location :
Amherst, MA
ISSN :
2159-3469
Print_ISBN :
978-1-4673-2234-8
Type :
conf
DOI :
10.1109/ISVLSI.2012.69
Filename :
6296461
Link To Document :
بازگشت