Title :
Elastic-Vt CMOS circuits for multiple on-chip power control
Author :
Mizuno, M. ; Furuta, K. ; Narita, S. ; Abiko, H. ; Sakai, I. ; Yamashina, M.
Author_Institution :
NEC Corp., Kanagawa, Japan
Abstract :
The elastic-Vt CMOS (EVTCMOS) circuit design controls MOS transistor source (not substrate) voltages, so fabrication requires no special steps. The post-fabrication threshold voltages can be switched back and forth between high Vt (sleep mode) and low Vt (active mode), and can be also controlled as a means of reducing the sensitivity to device-parameter deviations and operating-environment variations. This results in reduction of switching time between sleep and active modes, and in reduced static power consumption in sleep mode.
Keywords :
CMOS digital integrated circuits; integrated circuit design; integrated circuit technology; large scale integration; EVTCMOS; MOS transistor source; active mode; device-parameter deviations; digital ICs; elastic-Vt CMOS; multiple on-chip power control; operating-environment variations; post-fabrication threshold voltages; sensitivity; sleep mode; static power consumption; switching time; Circuits; Energy consumption; Energy management; Fabrication; MOS devices; MOSFETs; Power control; Power dissipation; Threshold voltage; Voltage control;
Conference_Titel :
Solid-State Circuits Conference, 1996. Digest of Technical Papers. 42nd ISSCC., 1996 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3136-2
DOI :
10.1109/ISSCC.1996.488627
