Title :
High-power 1.5-μm InGaAsP/InP lasers with tapered-gain-region
Author :
Donnelly, J.P. ; Walpole, J.N. ; Groves, S.H. ; Bailey, R.J. ; Missaggia, L.J. ; Napoleone, A.
Author_Institution :
Lincoln Lab., MIT, Lexington, MA, USA
Abstract :
Semiconductor lasers and amplifiers with tapered gain regions are well suited for applications requiring high output powers and good spatial mode quality. Operation these large-area devices requires epitaxial material with excellent uniformity. GaAs-based devices have been well demonstrated and we have recently reported InGaAsP/InP tapered lasers and amplifiers that operate at λ=1.3 μm. In this paper, the development of 1.5-μm InGaAsP/InP quantum well material suitable for this type of device is discussed and initial results on high power tapered lasers with near-diffraction limited beam widths fabricated in this material are presented
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; quantum well lasers; 1.5 micron; InGaAsP-InP; InGaAsP/InP quantum well; epitaxial material; high-power semiconductor laser; large-area device; near-diffraction limited beam width; tapered-gain-region; High power amplifiers; Indium phosphide; Laser modes; Optical materials; Power amplifiers; Power generation; Power lasers; Quantum well lasers; Semiconductor lasers; Semiconductor optical amplifiers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3895-2
DOI :
10.1109/LEOS.1997.645490
