Title :
High power diffraction limited output from a tapered laser operating at 1.55 μm
Author :
Cho, S.H. ; Fox, S. ; Johnson, B.G. ; Stone, D. ; Dagenais, M.
Author_Institution :
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
Abstract :
550 mW quasi-CW output power with 85% of the power in the central lobe is obtained from a 1.55 μm wavelength InGaAsP/InP MQW tapered unstable resonator. This power was found to be emitted in a near-diffraction-limited beam
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; quantum well lasers; 1.55 micron; 550 mW; InGaAsP-InP; high power InGaAsP/InP MQW tapered laser; near-diffraction-limited beam; quasi-CW output power; unstable resonator; Diffraction; Etching; Joining materials; Laser theory; Optical materials; Optical resonators; Power amplifiers; Power generation; Power lasers; Semiconductor lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3895-2
DOI :
10.1109/LEOS.1997.645491
