Characterization of nanofloating gate memory with ZnO nanoparticles embedded in polymeric matrix

In this study, 10nm thick Zn was deposited with onto Si and SiO₂ wafer substrates. SiO₂ thickness was 13.5nm. The PAA was spin coated onto Zn film substrate. This PAA is biphenyltetracarboxylic dianhydride-phenylene diamine (BPDA-PDA) commercial polyamic acid type. PAA/Zn layer were held to react with the metal layer at room temperature for 24 hours in vacuum desiccators. The Pl/Zn layer were cured at 350 °C and 400 °C for 1 ∼ 2 hours in N₂ atmosphere after drying at 135 °C for 30 min. For the electrical characterization of ZnO nanoparticle devices, capacitance-voltage (C-V) measurement system was constructed with a HP4280A and Boonton 7200 capacitance meter, N₂ and He cryostat (15 - 700 K), LS330 temperature controller and a DAQ system. Results imply that ZnO nanoparticle embedded in polymeric matrix system can be applied in a single-electron device and nanofloating gate memory device by using the quantum effect of the nanoparticles.