DocumentCode
3271283
Title
AlAs/AlInAs super-lattice oxide aperture based on InP substrate for long wavelength VCSELs
Author
Ohnoki, N. ; Ohtake, N. ; Koyama, F. ; Iga, K.
Author_Institution
P&I Lab., Tokyo Inst. of Technol., Yokohama, Japan
Volume
2
fYear
1997
fDate
10-13 Nov 1997
Firstpage
423
Abstract
In this paper, we propose and demonstrate an AlAs-AlInAs superlattice structure, epitaxially formed on an InP substrate for low threshold long wavelength VCSELs. The crystal quality of the following layers can be improved
Keywords
III-V semiconductors; aluminium compounds; indium compounds; laser cavity resonators; semiconductor lasers; semiconductor superlattices; substrates; surface emitting lasers; AlAs-AlInAs; AlAs-AlInAs super-lattice oxide aperture; AlAs-AlInAs superlattice structure; InP; InP substrate; crystal quality; epitaxially grown; long wavelength VCSELs; low threshold long wavelength VCSELs; Apertures; Electron optics; Indium phosphide; Light emitting diodes; Optical materials; Oxidation; Substrates; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location
San Francisco, CA
ISSN
1092-8081
Print_ISBN
0-7803-3895-2
Type
conf
DOI
10.1109/LEOS.1997.645499
Filename
645499
Link To Document