Title :
AlAs/AlInAs super-lattice oxide aperture based on InP substrate for long wavelength VCSELs
Author :
Ohnoki, N. ; Ohtake, N. ; Koyama, F. ; Iga, K.
Author_Institution :
P&I Lab., Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
In this paper, we propose and demonstrate an AlAs-AlInAs superlattice structure, epitaxially formed on an InP substrate for low threshold long wavelength VCSELs. The crystal quality of the following layers can be improved
Keywords :
III-V semiconductors; aluminium compounds; indium compounds; laser cavity resonators; semiconductor lasers; semiconductor superlattices; substrates; surface emitting lasers; AlAs-AlInAs; AlAs-AlInAs super-lattice oxide aperture; AlAs-AlInAs superlattice structure; InP; InP substrate; crystal quality; epitaxially grown; long wavelength VCSELs; low threshold long wavelength VCSELs; Apertures; Electron optics; Indium phosphide; Light emitting diodes; Optical materials; Oxidation; Substrates; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3895-2
DOI :
10.1109/LEOS.1997.645499
