Analysis of temperature effects on 1.55 μm vertical-cavity lasers

Author

Piprek, Joachim ; Rapp, Stefan ; Streubel, Klaus

Author_Institution

Mater. Sci. Program, Delaware Univ., Newark, DE, USA

Volume

2

fYear

1997

fDate

10-13 Nov 1997

Firstpage

428

Abstract

Long-wavelength vertical-cavity surface-emitting lasers (VCSELs) are strongly temperature sensitive. Room-temperature continuous-wave operation of those VCSELs has been achieved only recently. Here, we investigate pulsed operation of 1.55 μm VCSELs with strain-compensated InGaAsP/InP multi quantum wells (MQWs). A comprehensive two-dimensional VCSEL model is used to investigate those temperature effects. The optical gain is obtained from kp band structure computations and it includes many-body effects. Temperature dependent loss mechanisms like Auger recombination, carrier leakage, and intervalence band absorption are considered. Careful adjustment of material parameters led to an excellent agreement with a large variety of measurements

Keywords

III-V semiconductors; gallium arsenide; indium compounds; quantum well lasers; surface emitting lasers; 1.55 micron; Auger recombination; InGaAsP-InP; VCSEL; carrier leakage; intervalence band absorption; kp band structure; loss; many-body effects; optical gain; pulsed operation; strain-compensated InGaAsP/InP multi quantum well; temperature effects; two-dimensional model; vertical-cavity surface-emitting laser; Indium phosphide; Laser modes; Optical computing; Optical pulses; Optical sensors; Quantum well devices; Quantum well lasers; Surface emitting lasers; Temperature sensors; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.645501

Filename

645501