Ultrafast intersubband transitions in InGaAs/AlAs coupled double quantum well structures for near-infrared all-optical switching

Author

Yoshida, H. ; Mozume, T. ; Nishimura, T. ; Wada, O.

Author_Institution

FESTA Labs., Femtosecond Technol. Res. Assoc., Ibaraki, Japan

Volume

2

fYear

1997

fDate

10-13 Nov 1997

Firstpage

441

Abstract

We propose in this paper a coupled double quantum well (C-DQW) structure which enables intersubband transition (ISBT) responses useful for near-infrared ultrafast all-optical switching and ultrashort optical pulse emission. We show the capability of all-optical absorption and gain-switching between two ISBT wavelengths which can be tuned down to 1.5 μm in InGaAs-AlAs DQW on GaAs substrates

Keywords

III-V semiconductors; electro-optical switches; gallium arsenide; high-speed optical techniques; indium compounds; semiconductor quantum wells; 1.5 mum; GaAs; GaAs substrates; ISBT wavelengths; InGaAs-AlAs; InGaAs-AlAs DQW; InGaAs/AlAs coupled double quantum well; all-optical absorption; coupled double quantum well; gain-switching; intersubband transition; near-infrared all-optical switching; near-infrared ultrafast all-optical switching; ultrafast intersubband transitions; ultrashort optical pulse emission; Absorption; Indium gallium arsenide; Optical pulse generation; Optical refraction; Optical scattering; Optical variables control; Phonons; Pulse generation; Stimulated emission; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.645507

Filename

645507