Title :
Ultrafast intersubband transitions in InGaAs/AlAs coupled double quantum well structures for near-infrared all-optical switching
Author :
Yoshida, H. ; Mozume, T. ; Nishimura, T. ; Wada, O.
Author_Institution :
FESTA Labs., Femtosecond Technol. Res. Assoc., Ibaraki, Japan
Abstract :
We propose in this paper a coupled double quantum well (C-DQW) structure which enables intersubband transition (ISBT) responses useful for near-infrared ultrafast all-optical switching and ultrashort optical pulse emission. We show the capability of all-optical absorption and gain-switching between two ISBT wavelengths which can be tuned down to 1.5 μm in InGaAs-AlAs DQW on GaAs substrates
Keywords :
III-V semiconductors; electro-optical switches; gallium arsenide; high-speed optical techniques; indium compounds; semiconductor quantum wells; 1.5 mum; GaAs; GaAs substrates; ISBT wavelengths; InGaAs-AlAs; InGaAs-AlAs DQW; InGaAs/AlAs coupled double quantum well; all-optical absorption; coupled double quantum well; gain-switching; intersubband transition; near-infrared all-optical switching; near-infrared ultrafast all-optical switching; ultrafast intersubband transitions; ultrashort optical pulse emission; Absorption; Indium gallium arsenide; Optical pulse generation; Optical refraction; Optical scattering; Optical variables control; Phonons; Pulse generation; Stimulated emission; Ultrafast optics;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3895-2
DOI :
10.1109/LEOS.1997.645507
