Title :
Wavelength shifting of GaAs GRINSCH lasers by ion implantation
Author :
Tan, H.H. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
In summary, we have successfully demonstrated that proton irradiation can be used to tune the lasing wavelength of GaAs GRINSCH lasers. Up to a few nm shift can be obtained without any serious degradation in the laser performance. These results are very promising for WDM applications, as they require only small shift in wavelengths
Keywords :
III-V semiconductors; gallium arsenide; gradient index optics; ion implantation; laser tuning; optical transmitters; proton effects; quantum well lasers; wavelength division multiplexing; GaAs; GaAs GRINSCH lasers; WDM applications; ion implantation; lasing wavelength; proton irradiation; quantum well lasers; wavelength shifting; Annealing; Degradation; Diode lasers; Gallium arsenide; Ion implantation; Optical devices; Optical materials; Photonic band gap; Protons; Quantum well lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3895-2
DOI :
10.1109/LEOS.1997.645510
