DocumentCode
3271501
Title
Single versus double ion implantation defined AlGaAs/GaAs quantum well waveguide
Author
Li, Alex T H ; Li, E. Herbert
Author_Institution
Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong
Volume
2
fYear
1997
fDate
10-13 Nov 1997
Firstpage
453
Abstract
The purpose of this work is to investigate ion implantations on a two-dimensional optical waveguide structure. The waveguide structure, to be analyzed here consists of an AlGaAs-GaAs MQW on a thick AlGaAs buffer layer
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; ion implantation; optical waveguides; semiconductor quantum wells; AlGaAs-GaAs; AlGaAs-GaAs MQW; AlGaAs-GaAs quantum well waveguide; double ion implantation; single ion implantation; thick AlGaAs buffer layer; two-dimensional optical waveguide structure; waveguide structure; Gallium arsenide; Implants; Impurities; Ion implantation; Optical mixing; Optical refraction; Optical waveguides; Quantum well devices; Refractive index; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location
San Francisco, CA
ISSN
1092-8081
Print_ISBN
0-7803-3895-2
Type
conf
DOI
10.1109/LEOS.1997.645513
Filename
645513
Link To Document