• DocumentCode
    3271509
  • Title

    Stochastic Gradient Descent Optimization for Low Power Nano-CMOS Thermal Sensor Design

  • Author

    Okobiah, Oghenekarho ; Mohanty, Saraju P. ; Kougianos, Elias ; Garitselov, Oleg ; Zheng, Geng

  • Author_Institution
    NanoSystem Design Lab. (NSDL), Univ. of North Texas, Denton, TX, USA
  • fYear
    2012
  • fDate
    19-21 Aug. 2012
  • Firstpage
    285
  • Lastpage
    290
  • Abstract
    The drive for ultra efficient and low-cost portable devices continues to push the need for low power circuit designs. The increasing transistor density and complexity of IC designs aggravates the task of producing efficient low power and low cost design. The short time to market (TTM) also increases this burden on designers, as optimal designs have to be produced in an ever decreasing amount of time. This paper presents an optimization design flow methodology that optimizes the power (accounting leakage) consumption of integrated circuits (ICs). The design flow incorporates a stochastic gradient descent (SGD) based algorithm and is implemented using a 45 nm thermal sensor circuit as case study. Power-efficient high-sensitive thermal sensors are important to reduce the burden on the systems or circuits that they are implanted to sense. Experiments are performed to apply the proposed design flow methodology on the thermal sensor with the power consumption as the design objective while keeping the temperature resolution as a constraint. Experiments on full-blown (RCLK) netlist of sense amplifier show a reduction in power consumption by 38%.
  • Keywords
    CMOS analogue integrated circuits; amplifiers; gradient methods; low-power electronics; nanosensors; power consumption; stochastic programming; transistor circuits; IC design; RCLK; SGD; TTM; full-blown netlist; integrated circuit design; low power circuit nanoCMOS thermal sensor design; low-cost portable devices; optimal designs; optimization design flow methodology; power consumption; power-efficient high-sensitive thermal sensors; sense amplifier; size 45 nm; stochastic gradient descent optimization; transistor density; Algorithm design and analysis; Layout; Optimization; Ring oscillators; Temperature sensors; Transistors; Design Flow; Low Power; Nano-CMOS; Optimization; Stochastic Gradient Descent; Thermal Sensor;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI (ISVLSI), 2012 IEEE Computer Society Annual Symposium on
  • Conference_Location
    Amherst, MA
  • ISSN
    2159-3469
  • Print_ISBN
    978-1-4673-2234-8
  • Type

    conf

  • DOI
    10.1109/ISVLSI.2012.13
  • Filename
    6296487