One-dimensional transient device simulation using a direct method circuit simulator

A novel approach is presented for incorporating the transient solution of one-dimensional semiconductor drift-diffusion equations within a general circuit simulation tool. This approach allows simple representation of localized carrier transport models of simulated devices through equivalent circuit elements such as voltage-controlled current sources and capacitors. As the device-level simulation is carried out by the circuit simulator using an equivalent circuit representation, this approach also lends itself to mixed-mode simulation of devices and circuits. It has been shown that one-dimensional device structures can be simulated with an acceptable computational cost. The device simulation model described here has been implemented in the general-purpose direct method circuit simulation program iSMILE. The applications of the proposed device simulation approach are demonstrated by simulation examples, including the drift and diffusion of excess carriers generated by a localized light pulse in a GaAs p-i-n diode structure