Title :
A GaAs RF transceiver IC for 1.9 GHz digital mobile communication systems
Author :
Yamamoto, K. ; Maemura, K. ; Ohta, Y. ; Kasai, N. ; Noda, M. ; Yuura, H. ; Yoshii, Y. ; Nakayama, M. ; Ogala, N. ; Takagi, T. ; Otsubo, M.
Author_Institution :
Optoelectron. & Microwave Devices R&D Lab., Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
A 3.4 V single power supply GaAs single-chip RF transceiver IC for 1.9 GHz digital mobile communication systems such as the Japanese Personal Handy Phone System (PHS) consists of both analog and digital circuits. The analog circuits contain a power amplifier (PA), an SPDT switch (SW), two attenuators (ATTs) for transmitting and receiving modes, and a low-noise amplifier (LNA). The digital circuits contain a negative voltage generator (NVG) for single voltage operation and a logic circuit to control the analog circuits and the NVG.
Keywords :
III-V semiconductors; UHF amplifiers; UHF integrated circuits; cordless telephone systems; digital radio; gallium arsenide; mixed analogue-digital integrated circuits; mobile radio; personal communication networks; transceivers; 1.9 GHz; 3.4 V; GaAs; Personal Handy Phone System; RF transceiver IC; SPDT switch; attenuators; digital mobile communication systems; low-noise amplifier; negative voltage generator; power amplifier; single voltage operation; Analog circuits; Digital circuits; Digital integrated circuits; Gallium arsenide; Low-noise amplifiers; Mobile communication; Radio frequency; Radiofrequency integrated circuits; Switches; Transceivers;
Conference_Titel :
Solid-State Circuits Conference, 1996. Digest of Technical Papers. 42nd ISSCC., 1996 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3136-2
DOI :
10.1109/ISSCC.1996.488708
