DocumentCode :
3271592
Title :
Development of simultaneous image acquisition optics with transmitted and reflected light for 45nm (hp) node mask inspection
Author :
Hirano, Ryoichi ; Yamashita, Kyoji ; Ohira, Katsumi ; Matsuki, Kazuto ; Isomura, Ikunao ; Ogawa, Riki ; Kikuiri, Nobutaka ; Terasawa, Tsuneo
Author_Institution :
MIRAI-Assoc. of Super-Adv. Electron. Technol., Tsukuba, Japan
fYear :
2005
fDate :
25-28 Oct. 2005
Firstpage :
224
Lastpage :
225
Abstract :
A novel high-resolution mask inspection platform using DUV wavelength has been reported. It is operated at inspection wavelength of 198.5 nm. The wavelength is nearly equal to the exposure wavelength of ArF laser exposure tool.
Keywords :
argon compounds; light reflection; light transmission; masks; micro-optics; 198.5 nm; 45 nm; ArF laser exposure; DUV wavelength; exposure wavelength; high-resolution mask inspection platform; image acquisition optics; light reflection; light transmission; node mask inspection; Image sensors; Inspection; Laser beams; Lenses; Lighting; Lithography; Optical attenuators; Optical imaging; Optical reflection; Optical sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2005 International
Print_ISBN :
4-9902472-2-1
Type :
conf
DOI :
10.1109/IMNC.2005.203819
Filename :
1595295
Link To Document :
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