Title :
A new fabrication technology of FinFETs using a neutral beam etching
Author :
Endo, Kazuhiko ; Noda, Shuichi ; Ozaki, Takuya ; Samukawa, Seiji ; Masahara, Meishoku ; Liu, Yongxun ; Ishii, Kenichi ; Takashima, Hidenori ; Sugimata, Etsuro ; Matsukawa, Takashi ; Yamauchi, Hiroyuki ; Ishikawa, Yozo ; Suzuki, Eiichi
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki, Japan
Abstract :
Recently, a damage-free and highly efficient neutral-beam etching (NBE) system has been proposed using neutralization of negative ions generated in a pulse-time-modulated inductively coupled plasma (ICP) [Samukawa, 2002]. In this study, to find a potential solution for a damage free Si-Fin etching we demonstrated the new etching characteristics using the NBE. Rectangular Si-Fin channel and Si-FinFETs were successfully fabricated to take advantage of the low-energy and damage-free characteristic of the newly proposed neutral beam etching system.
Keywords :
MOSFET; elemental semiconductors; laser beam etching; silicon; Si; Si-Fin etching; Si-FinFET; neutral beam etching; neutralization; pulse-time-modulated inductively coupled plasma; Atomic measurements; Circuits; Dry etching; Fabrication; FinFETs; MOSFETs; Plasma applications; Plasma chemistry; Pulse generation; Pulse modulation;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2005 International
Print_ISBN :
4-9902472-2-1
DOI :
10.1109/IMNC.2005.203821
