Application of EPL to via formation in two-layer metallization

Author

Koba, F. ; Sakaue, H. ; Koike, K. ; Matsumaro, K. ; Yamashita, H. ; Iriki, N. ; Soda, E. ; Watanabe, T. ; Ishigami, T. ; Matsubara, Y. ; Arimoto, H.

Author_Institution

Semicond. Leading Edge Technol., Inc., Ibaraki, Japan

fYear

2005

fDate

25-28 Oct. 2005

Firstpage

238

Lastpage

239

Abstract

Recently immersion lithography has drawn much attention due to its potential for resolving features at 65-nm technology node and beyond. On the other hand, electron projection lithography (EPL) continues to be a promising candidate for the upcoming 45-nm technology node because even with ArF-immersion the "hole-layers" of around 60 nm are difficult to be delineated. And moreover, extreme ultraviolet (EUV) lithography (also an NGL candidate) might not be ready to meet the production edge of 45-nm technology node in 2009. In this paper we describe application of EPL to via formation in two-layer metallization process.

Keywords

electron beam lithography; metallisation; ultraviolet lithography; 45 nm; 65 nm; ArF immersion; EPL; electron projection lithography; hole-layers; two-layer metallization; via formation; Charge carrier processes; Chemical industry; Lead compounds; Lithography; Metallization; Page description languages; Resists; Scanning electron microscopy; Transmission electron microscopy; Ultraviolet sources;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2005 International

Print_ISBN

4-9902472-2-1

Type

conf

DOI

10.1109/IMNC.2005.203826

Filename

1595302