• DocumentCode
    3271760
  • Title

    Fabrication of self-organized nanopatterns by angle-controlled ion sputtering

  • Author

    Sekiba, Daiichiro

  • Author_Institution
    Inst. for Solid State Phys., Tokyo Univ., Kashiwashi, Japan
  • fYear
    2005
  • fDate
    25-28 Oct. 2005
  • Firstpage
    244
  • Lastpage
    245
  • Abstract
    By using ion sputtering, one can simply induce ripple-like nanoscale patterns on various solid surfaces [Navez, 1962]. On single metal crystals, the main parameters, dominating the pattern formation, are the substrate temperature (Ts) and the ion incidence angle θ [Sekiba, 2002]. An example shows the same Cu(100) surface after Ar+ sputtered with different sputtering conditions: (a) Ts ∼ room temperature and θ ∼ 0 degree from surface normal, (b) Ts ∼ 180 K and θ ∼ 70 degree. The size of the sample is Φ8 mm and 1 mm thickness. The current of irradiated ion was ∼ 2 μA, and the sputtering duration is ∼ 10 min in both cases. Thus at relatively higher temperature the formed pattern reflects the symmetry of the substrate due to the anisotropic atom diffusion.
  • Keywords
    nanopatterning; sputtering; 1 mm; angle-controlled ion sputtering; anisotropic atom diffusion; ion irradiation; metal crystals; nanoscale patterns; self-organized nanopatterns; solid surfaces; sputtering conditions; Anisotropic magnetoresistance; Fabrication; Magnetic anisotropy; Magnetic films; Nanopatterning; Optical films; Perpendicular magnetic anisotropy; Sputtering; Substrates; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microprocesses and Nanotechnology Conference, 2005 International
  • Print_ISBN
    4-9902472-2-1
  • Type

    conf

  • DOI
    10.1109/IMNC.2005.203829
  • Filename
    1595305