Title :
In-plane ordering of self-assembled InAs quantum dots on GaAsSb/GaAs(001) layers by molecular beam epitaxy
Author :
Kanto, Toru ; Yamaguchi, Koichi
Author_Institution :
Dept. of Electron. Eng., Electro-Commun. Univ., Tokyo, Japan
Abstract :
In this paper, we present the relationship between the growth conditions and the in-plane ordering of the InAs QDs on the GaAs/GaAsSb/GaAs(001) layers and discuss about the growth mechanism.
Keywords :
III-V semiconductors; arsenic compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; self-assembly; semiconductor growth; semiconductor quantum dots; GaAsSb-GaAs; InAs; InAs QD; growth conditions; growth mechanism; in-plane ordering; molecular beam epitaxy; self-assembled InAs quantum dots; Anisotropic magnetoresistance; Atomic beams; Atomic force microscopy; Atomic layer deposition; Buffer layers; Capacitive sensors; Gallium arsenide; Molecular beam epitaxial growth; Quantum dots; US Department of Transportation;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2005 International
Print_ISBN :
4-9902472-2-1
DOI :
10.1109/IMNC.2005.203830
