Title : 
A Compression-Based Hybrid MLC/SLC Management Technique for Phase-Change Memory Systems
         
        
            Author : 
Lee, Hyung Gyu ; Baek, Seungcheol ; Kim, Jongman ; Nicopoulos, Chrysostomos
         
        
            Author_Institution : 
Sch. of Elec. & Comp. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
         
        
        
        
        
        
            Abstract : 
The storage density of PCM has been demonstrated to double through the employment of Multi-Level Cell (MLC) PCM arrays. However, this increase in capacity comes at the expense of increased latency (both read and write) and decreased long-term endurance, as compared to the more conventional Single-Level Cell (SLC) PCM. These negative traits of MLCs detract from the potentially invaluable storage benefits. This paper introduces a compression-based hybrid MLC/SLC PCM management technique that aims to combine the performance edge of SLCs with the higher capacity of MLCs in a hybrid environment. Our trace-driven simulations with real application workloads demonstrate that the proposed technique achieves 3.6X performance enhancement and 72% energy reduction, on average, as compared with MLC-only configurations, while always providing the same effective capacity as the MLC-only mode.
         
        
            Keywords : 
data compression; phase change memories; compression based hybrid MLC SLC management; hybrid environment; multilevel cell; performance edge; performance enhancement; phase change memory systems; single level cell; storage density; Compression algorithms; Engines; Memory management; Microprocessors; Phase change materials; Resistance; Compression; Hybrid; Memory system; Phase-Change Memory;
         
        
        
        
            Conference_Titel : 
VLSI (ISVLSI), 2012 IEEE Computer Society Annual Symposium on
         
        
            Conference_Location : 
Amherst, MA
         
        
        
            Print_ISBN : 
978-1-4673-2234-8
         
        
        
            DOI : 
10.1109/ISVLSI.2012.62