A W-CDMA zero-IF front-end for UMTS in a 75 GHz SiGe BiCMOS technology

Author

Pretl, H. ; Schelmbauer, W. ; Maurer, L. ; Westermayr, H. ; Weigel, R. ; Klepser, B.-U. ; Adler, B. ; Fenk, J.

Author_Institution

Danube Integrated Circuit Eng., Linz, Austria

fYear

2001

fDate

20-22 May 2001

Firstpage

9

Lastpage

12

Abstract

A zero-IF front-end consisting of an I/Q down-conversion mixer, broadband I/Q-generation, fully-integrated VCO, dual-modulus prescaler, low-noise baseband buffer and blocking filter is presented. Integrated in a 75 GHz f/sub t/ BiCMOS technology with 0.35 /spl mu/m CMOS it draws 33 mA from a 2.7 V supply. Extremely low local-oscillator leakage of -95 dBm together with a high IIP2 of 55 dBm results in very low DC offset values of less than 20 mV at the baseband output of the IC. The presented circuit is intended for application in a highly-integrated UMTS receiver.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; broadband networks; code division multiple access; mobile radio; radio receivers; semiconductor materials; 0.35 micron; 2.7 V; 33 mA; 75 GHz; DC offset; I/Q down-conversion mixer; IIP2; LO leakage; RF integrated circuit; SiGe; SiGe BiCMOS technology; UMTS receiver; W-CDMA zero-IF front-end; blocking filter; broadband I/Q-generation; dual-modulus prescaler; fully-integrated VCO; low-noise baseband buffer; 3G mobile communication; Baseband; BiCMOS integrated circuits; CMOS technology; Filters; Germanium silicon alloys; Integrated circuit technology; Multiaccess communication; Silicon germanium; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2001. Digest of Papers. 2001 IEEE

Conference_Location

Phoenix, AZ, USA

ISSN

1529-2517

Print_ISBN

0-7803-6601-8

Type

conf

DOI

10.1109/RFIC.2001.935630

Filename

935630