Title :
A W-CDMA zero-IF front-end for UMTS in a 75 GHz SiGe BiCMOS technology
Author :
Pretl, H. ; Schelmbauer, W. ; Maurer, L. ; Westermayr, H. ; Weigel, R. ; Klepser, B.-U. ; Adler, B. ; Fenk, J.
Author_Institution :
Danube Integrated Circuit Eng., Linz, Austria
Abstract :
A zero-IF front-end consisting of an I/Q down-conversion mixer, broadband I/Q-generation, fully-integrated VCO, dual-modulus prescaler, low-noise baseband buffer and blocking filter is presented. Integrated in a 75 GHz f/sub t/ BiCMOS technology with 0.35 /spl mu/m CMOS it draws 33 mA from a 2.7 V supply. Extremely low local-oscillator leakage of -95 dBm together with a high IIP2 of 55 dBm results in very low DC offset values of less than 20 mV at the baseband output of the IC. The presented circuit is intended for application in a highly-integrated UMTS receiver.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; broadband networks; code division multiple access; mobile radio; radio receivers; semiconductor materials; 0.35 micron; 2.7 V; 33 mA; 75 GHz; DC offset; I/Q down-conversion mixer; IIP2; LO leakage; RF integrated circuit; SiGe; SiGe BiCMOS technology; UMTS receiver; W-CDMA zero-IF front-end; blocking filter; broadband I/Q-generation; dual-modulus prescaler; fully-integrated VCO; low-noise baseband buffer; 3G mobile communication; Baseband; BiCMOS integrated circuits; CMOS technology; Filters; Germanium silicon alloys; Integrated circuit technology; Multiaccess communication; Silicon germanium; Voltage-controlled oscillators;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2001. Digest of Papers. 2001 IEEE
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6601-8
DOI :
10.1109/RFIC.2001.935630
