DocumentCode
3271886
Title
Analysis of backscattering phenomenon from drain region in a silicon nanodiode
Author
Tsutsumi, Toshiyuki ; Tomizawa, Kazutaka
Author_Institution
Dept. of Comput. Sci., Meiji Univ., Kanagawa, Japan
fYear
2005
fDate
25-28 Oct. 2005
Firstpage
262
Lastpage
263
Abstract
In this paper, the backscattering phenomenon from drain region in a silicon nanodiode was analyzed. A Monte Carlo simulation is employed for analyzing the backscattering effect in a short channel device.
Keywords
Monte Carlo methods; backscatter; elemental semiconductors; nanoelectronics; nanostructured materials; semiconductor diodes; silicon; Monte Carlo simulation; Si; backscattering phenomenon; drain region; short channel device; silicon nanodiode; Acceleration; Acoustic devices; Acoustic scattering; Anisotropic magnetoresistance; Backscatter; Electrons; Nanoscale devices; Optical scattering; Phonons; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2005 International
Print_ISBN
4-9902472-2-1
Type
conf
DOI
10.1109/IMNC.2005.203838
Filename
1595314
Link To Document