Title :
Dual-band/tri-mode receiver IC for N- and W-CDMA systems using 6"-PHEMT technology
Author :
McNamara, B. ; Zhang, S. ; Murphy, M. ; Banzer, H.M. ; Kapusta, H. ; Rohrer, E. ; Grave, T. ; Verweyen, L.
Author_Institution :
Infineon Technol. Corp., Nashua, NH, USA
Abstract :
A dual-band/tri-mode receiver IC for CDMA based mobile systems has been fabricated using our 6"-PHEMT production line, comprising the complete RF front end and one IF stage. The first LNA stage exhibits an input IP3 of +8 dBm and a noise figure of 1.0 dB, the overall gain of the complete receiver is 26.0 dB. The current consumption only is 17 mA, for a minimum LO power demand of -7 dBm.
Keywords :
HEMT integrated circuits; code division multiple access; field effect MMIC; microwave receivers; mobile radio; telephone sets; 1.0 dB; 17 mA; 26.0 dB; 6 in; IF stage; IP3; LNA; N-CDMA system; PHEMT MMIC technology; RF front-end; W-CDMA system; dual-band tri-mode receiver IC; gain; mobile phone handset; noise figure; Dual band; HEMTs; Linearity; MODFETs; Multiaccess communication; Noise figure; Optimized production technology; Radio frequency; Radiofrequency integrated circuits; Space technology;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2001. Digest of Papers. 2001 IEEE
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6601-8
DOI :
10.1109/RFIC.2001.935631
