DocumentCode :
3271928
Title :
A 900MHz high efficiency and linearity adaptive CMOS power amplifier
Author :
Wang, Jing ; Liu, Zhangfa
Author_Institution :
Sch. of Electron. & Inf. Eng., Beijing Jiaotong Univ., Beijing, China
fYear :
2011
fDate :
15-17 April 2011
Firstpage :
969
Lastpage :
972
Abstract :
A high efficiency, linear, adaptive radio frequency (RF) power amplifier (PA) is presented. The working frequency is about 900MHz. The circuit employs a self-bias cascode for a higher performance and an adaptive bias to enhance linear and efficiency of the PA as well. This power amplifier is designed with the SMIC 0.18um CMOS RF process. The power supply is 1.8V. The simulation results show that the PA has a power gain of 30dB. In addition, the Power-Added Efficiency is over 33%.
Keywords :
CMOS analogue integrated circuits; UHF power amplifiers; low-power electronics; CMOS RF process; SMIC; adaptive radio frequency power amplifier; frequency 900 MHz; linearity adaptive CMOS power amplifier; power supply; power-added efficiency; self-bias cascode; size 0.18 mum; voltage 1.8 V; CMOS integrated circuits; Linearity; MOSFET circuits; Power amplifiers; Radio frequency; Resistance; Simulation; RF power amplifier; adaptive bias; high efficiency; linear;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electric Information and Control Engineering (ICEICE), 2011 International Conference on
Conference_Location :
Wuhan
Print_ISBN :
978-1-4244-8036-4
Type :
conf
DOI :
10.1109/ICEICE.2011.5777187
Filename :
5777187
Link To Document :
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