Title :
A Novel Process of Silicon-on-Nothing MOSFETs with Double Implantation
Author :
Peng, Benxian ; Yu, Ting ; Yu, Fengqi
Author_Institution :
Shanghai Jiao Tong Univ., Shanghai
Abstract :
Silicon-on-Nothing (SON) device is expected to be obtained by double He+ implantation. The leakage currents of the SON MOSFET using twice energy implants are lower for 1~2 order of magnitude than that of using single energy implant simulated by ATLAS Simulator on electrical characteristic of SON MOSFETs. The self-heating effect in SON device can be suppressed by etch-back sidewall of shallow trench insulation (STI). A theoretical simulation is proposed to calculate the ion implantation distribution precisely.
Keywords :
MOSFET; ion implantation; leakage currents; ATLAS simulator; MOSFET; SON device; double implantation; etch-back sidewall; ion implantation distribution; leakage currents; self-heating effect; shallow trench insulation; silicon-on-nothing device; Etching; Helium; Implants; Insulation; Ion implantation; Leakage current; MOSFETs; Silicon on insulator technology; Thermal conductivity; Thermal stresses; Ion implantation; SON; Self-heating;
Conference_Titel :
Integration Technology, 2007. ICIT '07. IEEE International Conference on
Conference_Location :
Shenzhen
Print_ISBN :
1-4244-1092-4
Electronic_ISBN :
1-4244-1092-4
DOI :
10.1109/ICITECHNOLOGY.2007.4290468
