Title :
A 0.35 /spl mu/m CMOS 2.5 GHz complementary -G/sub M/ VCO using PMOS inversion mode varactors
Author :
Bunch, R. ; Raman, S.
Author_Institution :
Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Abstract :
A fully integrated VCO has been fabricated in a standard single poly 4-metal 0.35 /spl mu/m 3.3 volt digital CMOS process, using a complementary negative G/sub M/ topology. PMOS inversion-mode varactors are used for frequency tuning. A phase noise of -97 dBc/Hz at 100 kHz offset has been measured using a single-ended test setup. The measured tuning range is 16 percent. Unbuffered and buffered versions of the oscillator were fabricated on the same die. The buffered version has an output power of nearly 0 dBm. The unbuffered core of the oscillator has a power dissipation of 35 mW.
Keywords :
CMOS integrated circuits; UHF integrated circuits; UHF oscillators; circuit tuning; integrated circuit design; varactors; voltage-controlled oscillators; 0.35 micron; 2.5 GHz; 3.3 V; 35 mW; CMOS fully integrated VCO; PMOS inversion mode varactors; UHF oscillator; buffered version; complementary -G/sub M/ VCO; complementary negative G/sub M/ topology; frequency tuning; inductor design; phase noise; single poly 4-metal CMOS process; tuning range; unbuffered version; CMOS process; Frequency; Noise measurement; Phase measurement; Phase noise; Testing; Topology; Tuning; Varactors; Voltage-controlled oscillators;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2001. Digest of Papers. 2001 IEEE
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6601-8
DOI :
10.1109/RFIC.2001.935639
