Title :
A 5.7 GHz Hiperlan SiGe BiCMOS voltage-controlled oscillator and phase-locked-loop frequency synthesizer
Author :
Klepser, B.-U.H. ; Scholz, M. ; Kucera, J.J.
Author_Institution :
Infineon Technol., Munich, Germany
Abstract :
A SiGe BiCMOS 5.5-6.4 GHz frequency synthesizer is presented. The synthesizer consists of an oscillator with a phase noise of -110 dBc/Hz at 1 MHz offset, and a 10 GHz phase-lock-loop circuit with an in-band phase noise of -79 dBc/Hz. The power consumption of the ICs was 9 mW and 17 mW, respectively.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; MMIC oscillators; frequency synthesizers; low-power electronics; phase locked loops; phase noise; semiconductor materials; transceivers; wireless LAN; 10 GHz; 17 mW; 5.5 to 6.4 GHz; 5.7 GHz; 9 mW; BiCMOS voltage-controlled oscillator; Hiperlan; SiGe; frequency synthesizer; phase noise; phase-locked-loop; power consumption; BiCMOS integrated circuits; Frequency conversion; Frequency synthesizers; Germanium silicon alloys; Logic; Phase locked loops; Phase noise; Silicon germanium; Voltage-controlled oscillators; Wireless LAN;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2001. Digest of Papers. 2001 IEEE
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6601-8
DOI :
10.1109/RFIC.2001.935642
