Title :
Student-designed Bluetooth radio in silicon-on-sapphire
Author_Institution :
Dept. of Electr. & Comput. Eng., Kansas State Univ., Manhattan, KS, USA
Abstract :
The core of a fully-integrated Bluetooth receiver has been designed in a 0.5 um Silicon-on-Sapphire (SOS) process by a team of 11 students during the Spring 2000 semester. Unlike previously reported RFIC development work done by graduate students in the course of their research, this design was completed in the context of a classroom setting in a single semester. The receiver incorporates a number of research efforts underway at the authors´ institution, providing a wide range of students with exposure to state-of-the-art design methods. Details of both the class structure and of the Bluetooth architecture being studied are discussed. Measurements taken from an early prototype circuit in SOS are also reported.
Keywords :
UHF integrated circuits; field effect integrated circuits; radio receivers; silicon-on-insulator; student experiments; 0.5 micron; RFIC; Si-Al/sub 2/O/sub 3/; fully-integrated Bluetooth radio receiver; silicon-on-sapphire technology; student design; Bluetooth; Design methodology; Filtering; Filters; Integrated circuit measurements; Product design; Radio frequency; Radiofrequency integrated circuits; Receivers; Springs;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2001. Digest of Papers. 2001 IEEE
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6601-8
DOI :
10.1109/RFIC.2001.935653