DocumentCode
3272330
Title
Design and modeling of compact on-chip transformer/balun using multi-level metal windings for RF integrated circuits
Author
Tao Liang ; Gillis, J. ; Wang, D. ; Cooper, P.
Author_Institution
Boston Design Center, IBM Microelectron., Lowell, MA, USA
fYear
2001
fDate
20-22 May 2001
Firstpage
117
Lastpage
120
Abstract
A compact integrated balun transformer is analyzed that meets the size demand of highly integrated RFICs for the wireless industry. The design of a balun transformer with 4:1 impedance ratio using multi-level windings significantly reduces the silicon area compared to that occupied by an equivalent planar design. Its application is demonstrated in a highly efficient, linear amplifier design which achieved first pass design success.
Keywords
BiCMOS integrated circuits; UHF amplifiers; UHF integrated circuits; baluns; integrated circuit design; RF integrated circuits; first pass design success; impedance ratio; linear amplifier design; multi-level metal windings; on-chip transformer/balun; wireless industry; Conductivity; Dielectric substrates; Impedance matching; Inductance; Inductors; RF signals; Radio frequency; Radiofrequency integrated circuits; Silicon; Spirals;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits (RFIC) Symposium, 2001. Digest of Papers. 2001 IEEE
Conference_Location
Phoenix, AZ, USA
ISSN
1529-2517
Print_ISBN
0-7803-6601-8
Type
conf
DOI
10.1109/RFIC.2001.935655
Filename
935655
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