DocumentCode :
3272458
Title :
Reduced intermodulation distortion of AlGaAs/InGaAs doped-channel FETs by air-bridge gate process
Author :
Hsien-Chin Chiu ; Feng-Tso Chien ; Shih-Cheng Yang ; Yi-Jen Chan
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
fYear :
2001
fDate :
20-22 May 2001
Firstpage :
143
Lastpage :
146
Abstract :
The conventional mesa isolation process in AlGaAs/InGaAs doped-channel FETs (DCFETs) results in the gate contacting the exposed highly n-type doped channel at the mesa sidewall, forming a parasitic gate leakage path. In this work, we suppress the gate leakage from the mesa-sidewall to increase the gate-to-drain breakdown voltage (BV/sub gd/) and the microwave power performance by using the air-bridge gate structure. The device gate leakage characteristics under high input power swing are particularly investigated in terms of the 3rd-order intermodulation distortion, which are sensitive to the sidewall gate leakage. The air-bridge gate DCFETs provide not only a lower power gain at higher input powers but also a lower IM3 power than those characteristics in conventional DCFETs.
Keywords :
III-V semiconductors; aluminium compounds; etching; gallium arsenide; indium compounds; intermodulation distortion; isolation technology; leakage currents; microwave field effect transistors; microwave power transistors; semiconductor device breakdown; semiconductor device metallisation; 3rd-order IMD; AlGaAs-InGaAs; IMD reduction; air-bridge gate process; device gate leakage characteristics; doped-channel FETs; fabrication technique; gate leakage suppression; gate-to-drain breakdown voltage; high input power swing; highly n-type doped channel; intermodulation distortion; mesa isolation process; mesa-sidewall; microwave power performance; parasitic gate leakage path; sidewall gate leakage; Etching; FETs; Gallium arsenide; Gate leakage; Indium gallium arsenide; Intermodulation distortion; Leakage current; Linearity; Microwave devices; Radio frequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2001. Digest of Papers. 2001 IEEE
Conference_Location :
Phoenix, AZ, USA
ISSN :
1529-2517
Print_ISBN :
0-7803-6601-8
Type :
conf
DOI :
10.1109/RFIC.2001.935662
Filename :
935662
Link To Document :
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