Field-modulating plate (FP) InGaP MESFET with high breakdown voltage and low distortion

Author

Wakejima, A. ; Ota, K. ; Matsunaga, K. ; Contrata, W. ; Kuzuhara, M.

Author_Institution

Syst. Devices & Fundamental Res., NEC Corp., Shiga, Japan

fYear

2001

fDate

20-22 May 2001

Firstpage

151

Lastpage

154

Abstract

This paper describes a successfully developed field-modulating plate (FP) InGaP MESFET with an extremely high breakdown voltage of 100 V. The FP-FET, consisting of a 2.62 mm gate width, delivered an output power of 4.3 W and an output power density of 1.6 W/mm at 1.95 GHz operated at a drain bias (Vd) of 55 V. A low 3rd-order intermodulation distortion (IM3) of -31 dBc was also achieved at 8 dB back-off from saturation power. These results show the developed FET is suited for applications in the next generation cellular base station.

Keywords

III-V semiconductors; UHF field effect transistors; gallium compounds; indium compounds; intermodulation distortion; power MESFET; semiconductor device breakdown; 1.95 GHz; 100 V; 2.62 mm; 4.3 W; 55 V; HV power device; InGaP; InGaP MESFET; RF power performance; cellular base station application; field-modulating plate MESFET; high breakdown voltage; intermodulation distortion; low 3rd-order IMD; low distortion characteristics; Breakdown voltage; FETs; Gallium arsenide; HEMTs; MESFETs; MODFETs; Power generation; Pulse measurements; Radio frequency; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2001. Digest of Papers. 2001 IEEE

Conference_Location

Phoenix, AZ, USA

ISSN

1529-2517

Print_ISBN

0-7803-6601-8

Type

conf

DOI

10.1109/RFIC.2001.935664

Filename

935664