Title :
Large signal bias-dependent modeling of PHEMTs by pulsed measurements
Author :
Ooi, B.L. ; Lan, K. ; Leong, M.S. ; Kooi, K.S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
A bias-dependent large signal model and corresponding parameter extraction procedures are presented to characterize PHEMT devices by pulsed measurements. Two nonlinear current sources and few additional parameters are used to model bias-dependence of the drain current. Results show that the method discussed in this paper can be applied to model the large signal behavior of PHEMTs from DC to RF at any bias points.
Keywords :
UHF field effect transistors; equivalent circuits; high electron mobility transistors; semiconductor device measurement; semiconductor device models; HEMT modeling; PHEMTs; bias-dependent large signal model; nonlinear current sources; parameter extraction procedures; pseudomorphic HEMT; pulsed measurements; Current measurement; Electric variables measurement; Electrical resistance measurement; Equivalent circuits; Foundries; PHEMTs; Pulse measurements; Radio frequency; Semiconductor device modeling; Voltage;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2001. Digest of Papers. 2001 IEEE
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6601-8
DOI :
10.1109/RFIC.2001.935665
